西門(mén)康IGBTSKM75GD128D兩單元封裝,芯片使用SPT技術(shù),飽和壓降約為2.0伏左右,開(kāi)關(guān)損耗比NPT技術(shù)的IGBT模塊降低20%左右,西門(mén)康IGBTSKM75GD128D完全可以在逆變焊機(jī)中使用,西門(mén)康IGBTSKM75GD128D可以使用在315安到500安的電焊機(jī)中,.5千瓦以上的變頻器中等。
SKM400GA128D SKM500GA128D SKM50GB12T4 SKM75GB12T4 SKM100GB12T4 SKM100GB12T4G SKM150GB12T4 SKM150GB12T4G SKM200GB12T4 SKM300GB12T4 SKM400GB12T4 SKM300GA12T4 SKM400GA12T4 SKM600GA12T4 SKM75GB173D SKM150GB173D SKM200GB173D SKM200GB173D1 SKM200GAL173D SKM200GAR173D SKM400GA173D SKM400GA173D1S SKM75GB176D SKM100GB176D SKM145GB176D SKM200GB176D SKM400GB176D SKM145GAL176D SKM200GAL176D SKM400GAL176D SKM600GA176D SKM800GA176D
京公網(wǎng)安備 11010802026078號(hào)